收藏本站
SiZ720DT
Vishay Siliconix
SPECIFICATIONS (T J = 25 °C, unless otherwise noted)
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Static
Drain-Source Breakdown Voltage
V DS Temperature Coefficient
V GS(th) Temperature Coefficient
V DS
? V DS /T J
? V GS(th) /T J
V GS = 0 V, I D = 250 μA
V GS = 0 V, I D = 250 μA
I D = 250 μA
I D = 250 μA
I D = 250 μA
I D = 250 μA
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
20
20
21
20
- 5.2
- 5.5
V
mV/°C
Gate Threshold Voltage
Gate-Body Leakage
V GS(th)
I GSS
V DS = V GS , I D = 250 μA
V DS = V GS , I D = 250 μA
V DS = 0 V, V GS = ± 20 V
Ch-1
Ch-2
Ch-1
Ch-2
1
1
2
2
± 100
± 100
V
nA
V DS = 20 V, V GS = 0 V
Ch-1
1
Zero Gate Voltage Drain Current
I DSS
V DS = 20 V, V GS = 0 V
V DS = 20 V, V GS = 0 V, T J = 55 °C
Ch-2
Ch-1
1
5
μA
V DS = 20 V, V GS = 0 V, T J = 55 °C
Ch-2
5
On-State Drain Current b
I D(on)
V DS ?? 5 V, V GS = 10 V
V DS ?? 5 V, V GS = 10 V
Ch-1
Ch-2
20
20
A
V GS = 10 V, I D = 16.8 A
Ch-1
0.0070 0.0087
Drain-Source On-State Resistance b
R DS(on)
V GS = 10 V, I D = 20 A
V GS = 4.5 V, I D = 14.6 A
Ch-2
Ch-1
0.0050 0.0062
0.0091 0.0115
?
V GS = 4.5 V, I D = 20 A
Ch-2
0.0065 0.0080
Forward Transconductance b
g fs
V DS = 10 V, I D = 16.8 A
V DS = 10 V, I D = 20 A
Ch-1
Ch-2
60
60
S
Dynamic a
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
C iss
C oss
C rss
Q g
Channel-1
V DS = 10 V, V GS = 0 V, f = 1 MHz
Channel-2
V DS = 10 V, V GS = 0 V, f = 1 MHz
V DS = 10 V, V GS = 10 V, I D = 16.8 A
V DS = 10 V, V GS = 10 V, I D = 20 A
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
825
2350
295
800
130
350
14.8
44
7.3
23
66
11
pF
Gate-Source Charge
Gate-Drain Charge
Q gs
Q gd
Channel-1
V DS = 10 V, V GS = 4.5 V, I D = 16.8 A
Channel-2
V DS = 10 V, V GS = 4.5 V, I D = 20 A
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
21
2.5
6.8
2.3
5.9
32
nC
Gate Resistance
R g
f = 1 MHz
Ch-1
Ch-2
0.4
0.3
2
1.5
4
3
?
Notes:
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width ? 300 μs, duty cycle ? 2 %.
www.vishay.com
2
Document Number: 65579
S11-2379-Rev. B, 28-Nov-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
发布紧急采购，3分钟左右您将得到回复。

采购需求

(若只采购一条型号，填写一行即可)

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

*型号 *数量 厂商 批号 封装
添加更多采购

我的联系方式

*
*
*
相关PDF资料
SIZ902DT-T1-GE3 MOSFET N-CH 30V DUAL D-S
SKY12322-86LF-EVB BOARD EVALUATION FOR SKY12322-86
SKY12323-303LF-EVB BOARD EVALUATION FOR SKY1232-303
SKY12324-73LF-EVB BOARD EVALUATION FOR SKY12324-73
SKY12325-350LF-EVB BOARD EVAL FOR SKY12325-350
SKY12328-350LF-EVB BOARD EVAL FOR SKY12328-350
SKY12339-350LF-EVB BOARD EVAL FOR SKY12339-350
SKY13251-349LF IC SWITCH SP3T GAAS 8QFN
相关代理商/技术参数
SIZ728DT 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:N-Channel 25 V (D-S) MOSFETs
SIZ728DT_12 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:N-Channel 25 V (D-S) MOSFETs
SIZ728DT-T1-GE3 功能描述:MOSFET 25V 16A / 35A N-Ch MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
SIZ730DT 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:N-Channel 30 V (D-S) MOSFETs
SIZ730DT_12 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:N-Channel 30 V (D-S) MOSFETs
SiZ730DT-T1-GE3 功能描述:MOSFET 30V 16/35A 27/48W 9.3/3.9mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
SIZ790DT 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Dual N-Channel 30 V (D-S) MOSFETs with Schottky Diode
SIZ790DT-T1-GE3 功能描述:MOSFET 30V 16A / 35A Dual N-Ch MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube